Ukufika kobuchwepheshe be-Gallium Nitride (GaN) kuguqule isimo sama-adaptha amandla, okwenza ukuthi kudalwe amashaja amancane kakhulu, alula, futhi asebenza kahle kakhulu kunozakwabo bendabuko abasekelwe ku-silicon. Njengoba ubuchwepheshe bukhula, siye sabona ukuvela kwezizukulwane ezihlukene zama-semiconductors e-GaN, ikakhulukazi i-GaN 2 ne-GaN 3. Nakuba zombili zinikeza ukuthuthuka okukhulu kune-silicon, ukuqonda umehluko phakathi kwalezi zizukulwane ezimbili kubalulekile kubathengi abafuna izixazululo zokushaja ezithuthuke kakhulu nezisebenza kahle. Lesi sihloko sidingida umehluko oyinhloko phakathi kwamashaja e-GaN 2 ne-GaN 3, ihlola intuthuko nezinzuzo ezinikezwa ukuphindaphinda kwakamuva.
Ukwazisa umehluko, kubalulekile ukuqonda ukuthi "i-GaN 2" kanye "ne-GaN 3" akuwona amagama ajwayelekile achazwe indikimba ebusayo eyodwa. Esikhundleni salokho, bamele intuthuko ekwakhiweni nasekukhiqizeni ama-transistors kagesi e-GaN, avame ukuhlotshaniswa nabakhiqizi abathile kanye nobuchwepheshe babo bobunikazi. Ngokuvamile, i-GaN 2 imelela isigaba sangaphambili samashaja e-GaN asebenzayo, kuyilapho i-GaN 3 ihlanganisa izinto ezintsha nentuthuko yakamuva.
Izindawo Ezibalulekile Zokuhlukanisa:
Umehluko oyinhloko phakathi kwamashaja e-GaN 2 kanye ne-GaN 3 ngokuvamile ukulezi zindawo ezilandelayo:
1. Ukushintsha Imvamisa nokusebenza kahle:
Enye yezinzuzo eziyinhloko ze-GaN ngaphezu kwe-silicon amandla ayo okushintsha kumaza aphezulu kakhulu. Le mvamisa ephezulu yokushintsha ivumela ukusetshenziswa kwezingxenye ezincane ze-inductive (njengama-transformer nama-inductors) ngaphakathi kweshaja, okunikela kakhulu kusayizi wayo oncishisiwe nesisindo. Ubuchwepheshe be-GaN 3 ngokuvamile buphusha lawa mafrikhwensi okushintsha abe phezulu kakhulu kune-GaN 2.
Ukwenyuka kwemvamisa yokushintsha kumiklamo ye-GaN 3 kuvame ukuhumushela ekusebenzeni kahle kokuguqulwa kwamandla okuphakeme nakakhulu. Lokhu kusho ukuthi iphesenti elikhulu lamandla kagesi adonswa odongeni alethwa kudivayisi exhunyiwe, alahleka amandla amancane njengokushisa. Ukusebenza kahle okuphezulu akunciphisi ukumoshwa kwamandla kuphela kodwa futhi kunomthelela ekusebenzeni okupholile kweshaja, okungase kwandise isikhathi sayo sokuphila futhi kuthuthukise ukuphepha.
2. Ukuphatha Okushisayo:
Nakuba i-GaN ngokwemvelo ikhiqiza ukushisa okuncane kune-silicon, ukuphatha ukushisa okukhiqizwa ngamaleveli aphezulu wamandla kanye namafrikhwensi okushintsha kuhlala kuyisici esibalulekile sokwakheka kweshaja. Ukuthuthuka kwe-GaN 3 kuvame ukufaka izindlela zokuphatha ezithuthukisiwe ezingeni le-chip. Lokhu kungase kuhlanganise izakhiwo zama-chip ezithuthukisiwe, izindlela ezithuthukisiwe zokuqeda ukushisa ngaphakathi kwe-GaN transistor ngokwayo, kanye nezindlela zokuzwa izinga lokushisa ezihlanganisiwe nezindlela zokulawula.
Ukuphatha okushisayo okungcono kumashaja e-GaN 3 kuwavumela ukuthi asebenze ngokuthembekile ekuphumeni kwamandla aphezulu kanye nemithwalo eqhubekayo ngaphandle kokushisisa ngokweqile. Lokhu kunenzuzo ikakhulukazi ekushajeni amadivayisi alambele amandla njengamakhompyutha aphathekayo namathebulethi.
3. Ukuhlanganisa kanye Nokuxaka:
Ubuchwepheshe be-GaN 3 ngokuvamile buhilela izinga eliphezulu lokuhlanganisa ngaphakathi kwe-GaN amandla IC (I-Integrated Circuit). Lokhu kungafaka phakathi ukujikeleza okwengeziwe kokulawula, izici zokuvikela (ezifana ne-over-voltage, over-current, kanye nokuvikelwa kwethempelesha eyeqile), ngisho nabashayeli bamasango ku-chip ye-GaN.
Ukuhlanganiswa okungeziwe kumiklamo ye-GaN 3 kungaholela emiklamo elula iyonke yeshaja enezingxenye ezimbalwa zangaphandle. Lokhu akunciphisi nje kuphela ibhili yezinto ezisetshenziswayo kodwa futhi kungathuthukisa ukwethembeka futhi kube negalelo ekuthuthukisweni okuncane. Isekhethi yokulawula eyinkimbinkimbi ehlanganiswe kuma-chips e-GaN 3 ingaphinda inike amandla ukulethwa kwamandla okunembe kakhulu nokusebenza kahle kudivayisi exhunyiwe.
4. Ukuminyana kwamandla:
Ukuminyana kwamandla, kukalwa ngama-watts kuyi-cubic inch ngayinye (W/in³), kuyimethrikhi engukhiye yokuhlola ukubumbana kwe-adaptha yamandla. Ubuchwepheshe be-GaN, ngokuvamile, buvumela ukuminyana kwamandla aphezulu kakhulu uma kuqhathaniswa ne-silicon. Ukuthuthuka kwe-GaN 3 kuvame ukuqhubezela lezi zibalo zokuminyana kwamandla nakakhulu.
Inhlanganisela yamafrikhwensi okushintsha aphakeme, ukusebenza kahle okuthuthukisiwe, nokuphathwa okushisayo okuthuthukisiwe kumashaja e-GaN 3 kwenza abakhiqizi bakwazi ukudala ama-adaptha amancane nanamandla kakhulu uma kuqhathaniswa nalawo asebenzisa ubuchwepheshe be-GaN 2 ekuphumeni kwamandla okufanayo. Lokhu kuyinzuzo ebalulekile yokuphatheka nokuba lula.
5. Izindleko:
Njenganoma ibuphi ubuchwepheshe obuthuthukayo, izizukulwane ezintsha zivame ukuza nezindleko eziphezulu zokuqala. Izingxenye ze-GaN 3, njengoba zithuthuke kakhulu futhi okungenzeka zisebenzisa izinqubo zokukhiqiza eziyinkimbinkimbi, zingabiza kakhulu kunozakwabo be-GaN 2. Kodwa-ke, njengoba ukukhiqizwa kukhula futhi nobuchwepheshe buba yinto evamile, umehluko wezindleko kulindeleke ukuba unciphise ngokuhamba kwesikhathi.
Ukuhlonza Amashaja e-GaN 2 ne-GaN 3:
Kubalulekile ukuqaphela ukuthi abakhiqizi abahlale belebula ngokusobala amashaja abo njengokuthi "GaN 2" noma "GaN 3." Kodwa-ke, ungakwazi ukunquma ukukhiqizwa kobuchwepheshe be-GaN obusetshenziswa ngokusekelwe ekucacisweni kweshaja, usayizi, kanye nedethi yokukhishwa. Ngokuvamile, amashaja amasha aqhosha ngokuminyana kwamandla aphezulu nezici ezithuthukisiwe maningi amathuba okuthi asebenzise i-GaN 3 noma izizukulwane ezizayo.
Izinzuzo zokukhetha Ishaja ye-GaN 3:
Nakuba amashaja e-GaN 2 asevele enikeza izinzuzo ezibalulekile kune-silicon, ukukhetha ishaja ye-GaN 3 kunganikeza izinzuzo ezengeziwe, ezihlanganisa:
- Ngisho Idizayini Encane Nelula: Jabulela ukuphatheka okukhulu ngaphandle kokudela amandla.
- Ukusebenza Okuthuthukile: Yehlisa ukumoshwa kwamandla kanye nezikweletu ezingase zehle zikagesi.
- Ukusebenza Kwe-Thermal Okuthuthukisiwe: Izwa ukusebenza okupholile, ikakhulukazi ngesikhathi semisebenzi enzima yokushaja.
- Ukushaja Okushesha Kakhulu (Ngokungaqondile): Ukusebenza kahle okuphezulu nokuphathwa okungcono kwe-thermal kungavumela ishaja ukuthi igcine ukuphuma kwamandla aphezulu isikhathi eside.
- Ezinye izici Ezithuthukile: Zuza ezindleleni zokuvikela ezihlanganisiwe kanye nokulethwa kwamandla okuthuthukisiwe.
Ushintsho olusuka ku-GaN 2 ukuya ku-GaN 3 lumele isinyathelo esibalulekile esiya phambili ekuthuthukisweni kobuchwepheshe be-adaptha yamandla ye-GaN. Nakuba zombili izizukulwane zinikeza ukuthuthuka okukhulu ngaphezu kwamashaja e-silicon endabuko, i-GaN 3 ngokuvamile iletha ukusebenza okuthuthukisiwe ngokuya ngokushintsha imvamisa, ukusebenza kahle, ukuphatha okushisayo, ukuhlanganisa, futhi ekugcineni, ukuminyana kwamandla. Njengoba ubuchwepheshe buqhubeka bukhula futhi bufinyeleleka kakhudlwana, amashaja e-GaN 3 akulungele ukuba yizinga elibusayo lokusebenza okuphezulu, ukulethwa kwamandla ahlangene, okuhlinzeka abathengi umuzwa wokushaja olungele ngisho nangokwengeziwe futhi osebenza kahle wezinhlobonhlobo zabo zemishini kagesi. Ukuqonda lo mehluko kunikeza abathengi amandla okwenza izinqumo ezinolwazi lapho bekhetha i-adaptha yabo yamandla elandelayo, ukuqinisekisa ukuthi bayazuza entuthukweni yakamuva yobuchwepheshe bokushaja.
Isikhathi sokuthumela: Mar-29-2025